When MILMEGA decided to begin development of a range of rack mountable RF amplifiers to complement its highly acclaimed Microwave amplifiers, a key internal requirement was to leverage the performance benefits that wide band gap transistor technology brought to our markets.
Of the technologies available, MILMEGA chose Silicon Carbide (SiC). SiC has several intrinsic advantages that enable broadband amplifiers for UHF applications. These properties include:
- High thermal conductivity
- High breakdown electric field
- High saturated electron drift velocity
- High power density (power per unit gate periphery)
These features make the SiC MESFET an attractive power FET for multi-octave to decade bandwidth power amplifiers enabling the development of a high power product in compact packages.
As an example of what is possible the MILMEGA 200MHz to 1GHz 1kW amplifier, designed with SiC at its core, will be 1/3 of the physical size and weight of an alternate design based on a Silicon MOSFET technology.
The key benefits attained in this range are:
- The continuation of the MILMEGA legacy of power upgradeable amplifiers through the use of a common power module. This allows the 250W amplifier to be easily upgraded to a 500W amplifier and then to a 1000W amplifier.
- Leveraging of the benefits of 21st century power transistor technology - avoiding the possibility of built in transistor obsolescence
- Unhindered operation into a short / open circuit with no damage to the amplifier or foldback of power
- State of the art power density for rack mounting RF broadband amplifiers
- Simple retrospective power upgrade available by the addition of RF modules
To find out more and to gain access to preliminary data sheets please complete your details on our enquiry form.